EMTERC > Staff and Students > Dr. Richard Cross
Name
Dr. Richard Cross
Position
Research Fellow
Membership
Member of MRS, IEEE
Previous experience
Received the B.Sc. (Hons.) degree in Physics and the M.Sc. degree in Information Technology from De Montfort University, Leicester, U.K., in 1997 and 1998, respectively, and the PhD degree from the Emerging Technologies Research Centre (EMTERC), De Montfort University, in 2005. His doctoral research involved the development of a low temperature deposition process for hydrogenated amorphous silicon for thin-film transistor (TFT) applications. Since April 2005, he has been a Research Fellow with EMTERC, working on different TFT technologies and the growth and characterisation of semiconducting nanostructures.
Research Interests
Nanomaterials (specifically semiconducting nanowires and carbon nanotubes); bio-nano interface; biological and chemical sensors and the applications of nanotechnology for healthcare therapies and diagnosis; thin film semiconducting materials, e.g. hydrogenated amorphous silicon, zinc oxide, oxide semiconductors, thin film transistors; flexible electronics, printable electronics, solar cells.
Research Projects
The Performance and Stability of Zinc Oxide Thin Film Transistors Incorporating High-k Dielectrics.
A  Cleaner, Greener Low Carbon Fabrication Process for Photovoltaic Devices.
Enhancing IR Micro Sensor Technology to More Accurately Measure the Temperature of Electronic Devices.
Selected Publications
R. B. M. Cross, M. M. De Souza, E. M. Sankara Narayanan, ‘A low temperature combination method for the production of ZnO nanowires’, Nanotechnology 16 (2005) 2188.
R. B .M. Cross and M. M. De Souza, ‘Investigating the stability of zinc oxide thin film transistors’, Applied Physics Letters 89 26 (2006) 263513.
R. B .M. Cross and M. M. De Souza, ‘The effect of gate bias stress and temperature on the performance of ZnO thin film transistors’, IEEE Transactions on Device and Materials Reliability (Invited paper) 8   (2) (2008) 277.
T. A. Mih, R. B. M. Cross and S. Paul, ‘A novel method for the growth of low temperature silicon structures for 3-D flash memory devices’,   Materials Research Society Symposium Proceedings 1112, (2009) 265.
D. K.  Ngwashi, R. B. M. Cross,Ab initio investigation of oxygen adsorption on the stability of carbon nanotube field effect transistors (CNTFETs)’, Solid State Communications 150 (5-6), (2010) 258.
Expertise
Thin film/nanomaterials deposition/growth techniques and system design including various chemical vapour deposition (CVD) processes; RF and DC magnetron sputtering; thermal and e-beam evaporation; FTIR spectroscopy, UV/VIS spectroscopy, photolithography, surface profilometry, photoluminescence spectroscopy, scanning electron microscopy, atomic force microscopy, scanning tunnelling microscopy and standard electrical thin-film transistor measurements.